NJG1127HB6
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メーカー:
NJR
記述:
RF Amplifier 800MHz Band LNA GaAs MMIC
部門:
電子半導体
指定
Operating Supply Current ::
16 mA
Product Category ::
RF Amplifier
マウントスタイル::
SMD/SMT
Gain ::
15 dB
最低動作温度::
- 40°C
Operating Frequency ::
800 MHz
Package / Case ::
USB-8-B6
Maximum Operating Temperature ::
+ 85 C
Test Frequency ::
880 MHz
Operating Supply Voltage ::
2.8 V
NF - Noise Figure ::
2.5 dB
Type ::
Low Noise Amplifier
P1dB - Compression Point ::
9 dBm
Manufacturer ::
NJR
導入
NJRのNJG1127HB6は RFアンプです. 私たちが提供するものは,グローバル市場で競争力のある価格で,オリジナルと新しい部品です.商品についてもっと知りたいか 価格を低くしたいかオンラインチャットでご連絡ください!
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| イメージ | 部分# | 記述 | |
|---|---|---|---|
|
|
NJM3404AM-TE1 |
Operational Amplifiers - Op Amps Dual Single Supply
|
|
|
|
NJM2742V-TE1 |
High Speed Operational Amplifiers Dual High Speed
|
|
|
|
NJM13600M-TE2 |
Transconductance Amplifiers Dual
|
|
|
|
NJM13700M |
Transconductance Amplifiers Dual
|
|
|
|
NJM13600M-TE1 |
Transconductance Amplifiers Dual
|
|
|
|
NJM13700M-TE1 |
Transconductance Amplifiers Dual
|
|
|
|
NJM13700D |
Transconductance Amplifiers Dual
|
|
|
|
NJM13600M |
Transconductance Amplifiers Dual
|
|
|
|
NJM13600D |
Transconductance Amplifiers Dual
|
|
|
|
NJM13700M-TE2 |
Transconductance Amplifiers Dual
|
RFQを送りなさい
標準的:
MOQ: